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| Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 s (typ.) LN151F o4.60.15 Unit : mm Glass window 12.7 min. 4.50.2 2-o0.450.05 2.540.25 2 0. 0 1. 1. 0 0. 15 3 45 Infrared light emission close to monochromatic light : P = 950 nm (typ.) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 21 o5.75 max. 1: Anode 2: Cathode LN151L o4.60.15 Unit : mm Glass lens Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 2 3 -25 to +100 -30 to+100 Unit mW mA A V C C 12.7 min. 6.30.3 2-o0.45 0.05 VR Topr Tstg 2.540.25 1. 0 0 .2 1. 0 0 .1 f = 100 Hz, Duty cycle = 0.1 % 5 3 45 21 o5.75 max. 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN151F LN151L Symbol PO P VF IR Ct tr tf Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 5 typ 7.5 950 50 1.3 60 1 1 32 8 max Unit mW nm nm 1.6 10 V A pF s s deg. deg. 1 Infrared Light Emitting Diodes LN151F, LN151L IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 3 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) 10 IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 2 Allowable forward current 80 Pulse forward current 10 60 1 1 40 10 -1 20 10 -1 0 - 25 0 20 40 60 80 100 10 -2 10 -1 10 -2 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) VF -- Ta 1.6 10 3 PO -- IFP (1) tw = 10s Duty Cycle = 0.1% (2) DC Ta = 25C 10 PO -- Ta IF = 50mA PO VF (V) 1.2 50mA 10mA 0.8 10 2 (1) Relative radiant power Forward voltage 10 Relative radiant power 10 3 10 4 PO 1 (2) 1 10 10 2 10 -1 - 40 IF = 100mA 1 0.4 10 -1 0 - 40 0 40 80 120 10 -2 0 40 80 Ambient temperature Ta (C ) Pulse forward current IFP (mA) Ambient temperature Ta (C ) Spectral characteristics 100 IF = 100mA Ta = 25C Directivity characteristics 0 100 90 10 20 Ta = 25C 10 2 Frequency characteristics Ta = 25C Relative radiant intensity (%) LN151F 80 70 Relative radiant intensity(%) 80 30 10 60 60 50 LN151L 40 40 50 60 70 80 90 Modulation output 1 40 30 20 10 -1 20 0 800 850 900 950 1000 1050 1100 10 -2 10 10 2 10 3 10 4 Wavelength (nm) Frequency f (kHz) 2 |
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